Tunneling Anisotropic Magnetoresistance (TAMR)
Tunneling anisotropic magnetoresistance (TAMR) is a magnetoresistance phenomenon which occurs in magnetic systems where electron transport is dominated by tunneling. The manifestation of this effect is the conductance change with the direction of saturation magnetization. TAMR has been observed experimentally in tunnel junctions with dilute magnetic semiconductor electrodes. Here we demonstrate the existence of TAMR driven by interface resonant states in tunnel junctions with metal electrodes : TAMR for tunneling from Fe (001) surface TAMR in broken atomic-size contacts TAMR in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers
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