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Spin-Dependent Tunneling Spin-dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) is strongly influenced by the atomic structure and bonding at the interfaces between the ferromagnetic electrodes and the insulating barrier. Different models are considered, which illustrate the decisive role of interfaces and a barrier in controlling the spin polarization of the tunneling current. Effects of defects such as O vacancies is discussed. The results are important for the understanding of electronic and transport properties of MTJs. Interface effects within a simple tight-binding model Effect of Co surface oxidation on SDT Effect of interface Co-O bonding on SDT in Co/Al2O3/Co MTJs Effect of interface states on SDT in Fe/MgO/Fe MTJs Negative spin polarization in Co/SrTiO3/Co MTJs Destructive effect of disorder on resonant transmission in MTJs Effect of boron on SDT in FeCo/MgO/FeCoB MTJs Effect of O vacancies on SDT in Fe/MgO/Fe MTJs
Review Article: E. Y. Tsymbal, K. D. Belashchenko, J. Velev, M. van Schilfgaarde, I. I. Oleynik, and D. A. Stewart, “Interface effects in spin-dependent tunneling”, Progress in Materials Science 52, 401–420 (2007). |
